A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices
In this work, the electrical properties of dislocation loops and their role in the generation of leakage currents in p-n or Schottky junctions were investigated both experimentally and through simulations. Deep Level Transient Spectroscopy (DLTS) reveals that the implantation of silicon with 2 × 101...
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American Institute of Physics
2023
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| Online Access: | https://cris.library.msu.ac.zw//handle/11408/5615 https://doi.org/10.1063/1.4935293 |
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| author | C. Nyamhere A. Scheinemann A. Schenk A. Scheit F. Olivie F. Cristiano |
| author2 | CNRS , LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France; Univ de Toulouse , LAAS, F-31400 Toulouse, France; Midlands State University , P. Bag 9055, Gweru, Zimbabwe |
| author_facet | CNRS , LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France; Univ de Toulouse , LAAS, F-31400 Toulouse, France; Midlands State University , P. Bag 9055, Gweru, Zimbabwe C. Nyamhere A. Scheinemann A. Schenk A. Scheit F. Olivie F. Cristiano |
| author_sort | C. Nyamhere |
| collection | DSpace |
| description | In this work, the electrical properties of dislocation loops and their role in the generation of leakage currents in p-n or Schottky junctions were investigated both experimentally and through simulations. Deep Level Transient Spectroscopy (DLTS) reveals that the implantation of silicon with 2 × 1015 Ge cm−2 and annealing between 1000 °C and 1100 °C introduced two broad electron levels EC − 0.38 eV and EC − 0.29 eV in n-type samples and a single broad hole trap EV + 0.25 eV in the p-type samples. These trap levels are related to the extended defects (dislocation loops) formed during annealing. Dislocation loops are responsible for the significant increase of leakage currents which are attributed to the same energy levels. The comparison between structural defect parameters and electrical defect concentrations indicates that atoms located on the loop perimeter are the likely sources of the measured DLTS signals. The combined use of defect models and recently developed DLTS simulation allows reducing the number of assumptions and fitting parameters needed for the simulation of leakage currents, therefore improving their predictability. It is found that simulations based on the coupled-defect-levels model reproduce well the measured leakage current values and their field dependence behaviour, indicating that leakage currents can be successfully simulated on the exclusive basis of the experimentally observed energy levels. |
| format | research article |
| id | ir-11408-5615 |
| institution | My University |
| publishDate | 2023 |
| publisher | American Institute of Physics |
| record_format | dspace |
| spelling | ir-11408-56152023-05-05T06:49:26Z A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices C. Nyamhere A. Scheinemann A. Schenk A. Scheit F. Olivie F. Cristiano CNRS , LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France; Univ de Toulouse , LAAS, F-31400 Toulouse, France; Midlands State University , P. Bag 9055, Gweru, Zimbabwe ETH Zürich , Gloriastr. 35, 8092 Zurich, Switzerland ETH Zürich , Gloriastr. 35, 8092 Zurich, Switzerland IHP, Im Technologiepark 25 , 15236 Frankfurt (Oder), Germany CNRS , LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France; Univ de Toulouse , LAAS, F-31400 Toulouse, France CNRS , LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France; Univ de Toulouse , LAAS, F-31400 Toulouse, France Dislocation loops Leakage currents Si shallow junction devices In this work, the electrical properties of dislocation loops and their role in the generation of leakage currents in p-n or Schottky junctions were investigated both experimentally and through simulations. Deep Level Transient Spectroscopy (DLTS) reveals that the implantation of silicon with 2 × 1015 Ge cm−2 and annealing between 1000 °C and 1100 °C introduced two broad electron levels EC − 0.38 eV and EC − 0.29 eV in n-type samples and a single broad hole trap EV + 0.25 eV in the p-type samples. These trap levels are related to the extended defects (dislocation loops) formed during annealing. Dislocation loops are responsible for the significant increase of leakage currents which are attributed to the same energy levels. The comparison between structural defect parameters and electrical defect concentrations indicates that atoms located on the loop perimeter are the likely sources of the measured DLTS signals. The combined use of defect models and recently developed DLTS simulation allows reducing the number of assumptions and fitting parameters needed for the simulation of leakage currents, therefore improving their predictability. It is found that simulations based on the coupled-defect-levels model reproduce well the measured leakage current values and their field dependence behaviour, indicating that leakage currents can be successfully simulated on the exclusive basis of the experimentally observed energy levels. 118 1 13 2023-05-05T06:49:26Z 2023-05-05T06:49:26Z 2015-11-09 research article https://cris.library.msu.ac.zw//handle/11408/5615 https://doi.org/10.1063/1.4935293 #PLACEHOLDER_PARENT_METADATA_VALUE# European Union Seventh Framework Programme (FP7/2007-2013) Journal of Applied Physics 1089-7550 258547 (ATEMOX) open American Institute of Physics |
| spellingShingle | Dislocation loops Leakage currents Si shallow junction devices C. Nyamhere A. Scheinemann A. Schenk A. Scheit F. Olivie F. Cristiano A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices |
| title | A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices |
| title_full | A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices |
| title_fullStr | A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices |
| title_full_unstemmed | A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices |
| title_short | A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices |
| title_sort | comprehensive study of the impact of dislocation loops on leakage currents in si shallow junction devices |
| topic | Dislocation loops Leakage currents Si shallow junction devices |
| url | https://cris.library.msu.ac.zw//handle/11408/5615 https://doi.org/10.1063/1.4935293 |
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