Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (1 0 0) and defects introduced during contacts fabrication and annealing process
Palladium (Pd) and cobalt (Co) Schottky barrier diodes were fabricated on n-Ge (1 0 0). The Pd-Schottky contacts were deposited by resistive evaporation while the Co-contacts were deposited by resistive evaporation and electron beam deposition. Current–voltage (I–V), capacitance–voltage (C–V) and de...
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Elsevier
2021
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| Online Access: | https://www.sciencedirect.com/science/article/abs/pii/S0921452609011156 https://doi.org/10.1016/j.physb.2009.09.043 http://hdl.handle.net/11408/4270 |
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| author | Chawanda, Albert Nyamhere, C. Auret, F. D. Mtangi, W. Hlatshwayo, T. T. Diale, M. Nel, J. M. |
| author_facet | Chawanda, Albert Nyamhere, C. Auret, F. D. Mtangi, W. Hlatshwayo, T. T. Diale, M. Nel, J. M. |
| author_sort | Chawanda, Albert |
| collection | DSpace |
| description | Palladium (Pd) and cobalt (Co) Schottky barrier diodes were fabricated on n-Ge (1 0 0). The Pd-Schottky contacts were deposited by resistive evaporation while the Co-contacts were deposited by resistive evaporation and electron beam deposition. Current–voltage (I–V), capacitance–voltage (C–V) and deep level transient spectroscopy (DLTS) measurements were performed on as-deposited and annealed samples. Electrical properties of Pd and Co samples annealed between 30 and 600 °C indicate the formation of one phase of palladium germanide and two phases of cobalt germanide. No defects were observed for the resistively evaporated as-deposited Pd-and Co-Schottky contacts. A hole trap at 0.33 eV above the valence band was observed on the Pd-Schottky contacts after annealing at 300 °C. An electron trap at 0.37 eV below the conduction band and a hole trap at 0.29 eV above the valence band was observed on as-deposited Co-electron beam deposited Schottky contacts. Rutherford back scattering (RBS) technique was also used to characterise the Co–Ge, for as-deposited and annealed samples. |
| format | Article |
| id | ir-11408-4270 |
| institution | My University |
| language | English |
| publishDate | 2021 |
| publisher | Elsevier |
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| spelling | ir-11408-42702022-06-27T13:49:06Z Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (1 0 0) and defects introduced during contacts fabrication and annealing process Chawanda, Albert Nyamhere, C. Auret, F. D. Mtangi, W. Hlatshwayo, T. T. Diale, M. Nel, J. M. Schottky contacts DLTS Germanium Palladium (Pd) and cobalt (Co) Schottky barrier diodes were fabricated on n-Ge (1 0 0). The Pd-Schottky contacts were deposited by resistive evaporation while the Co-contacts were deposited by resistive evaporation and electron beam deposition. Current–voltage (I–V), capacitance–voltage (C–V) and deep level transient spectroscopy (DLTS) measurements were performed on as-deposited and annealed samples. Electrical properties of Pd and Co samples annealed between 30 and 600 °C indicate the formation of one phase of palladium germanide and two phases of cobalt germanide. No defects were observed for the resistively evaporated as-deposited Pd-and Co-Schottky contacts. A hole trap at 0.33 eV above the valence band was observed on the Pd-Schottky contacts after annealing at 300 °C. An electron trap at 0.37 eV below the conduction band and a hole trap at 0.29 eV above the valence band was observed on as-deposited Co-electron beam deposited Schottky contacts. Rutherford back scattering (RBS) technique was also used to characterise the Co–Ge, for as-deposited and annealed samples. 2021-05-27T12:36:42Z 2021-05-27T12:36:42Z 2009 Article 0921-4526 https://www.sciencedirect.com/science/article/abs/pii/S0921452609011156 https://doi.org/10.1016/j.physb.2009.09.043 http://hdl.handle.net/11408/4270 en Physica B: Condensed Matter;Vol. 404; No. 22: p. 4482-4484 open Elsevier |
| spellingShingle | Schottky contacts DLTS Germanium Chawanda, Albert Nyamhere, C. Auret, F. D. Mtangi, W. Hlatshwayo, T. T. Diale, M. Nel, J. M. Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (1 0 0) and defects introduced during contacts fabrication and annealing process |
| title | Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (1 0 0) and defects introduced during contacts fabrication and annealing process |
| title_full | Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (1 0 0) and defects introduced during contacts fabrication and annealing process |
| title_fullStr | Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (1 0 0) and defects introduced during contacts fabrication and annealing process |
| title_full_unstemmed | Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (1 0 0) and defects introduced during contacts fabrication and annealing process |
| title_short | Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (1 0 0) and defects introduced during contacts fabrication and annealing process |
| title_sort | thermal stability study of palladium and cobalt schottky contacts on n-ge (1 0 0) and defects introduced during contacts fabrication and annealing process |
| topic | Schottky contacts DLTS Germanium |
| url | https://www.sciencedirect.com/science/article/abs/pii/S0921452609011156 https://doi.org/10.1016/j.physb.2009.09.043 http://hdl.handle.net/11408/4270 |
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