Comparison of nickel, cobalt, pelladium and tungsten schottky contacts on n-4H-SiC
We have investigated the current-voltage (I-V) characteristics of nickel (Ni), cobalt (Co), tungsten (W) and palladium (Pd) Schottky contacts on n-type 4H-SiC in the 300–800 K temperature range. Results extracted from I-V measurements of Schottky barrier diodes showed that barrier height (ФBo) and i...
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| Format: | Article |
| Language: | English |
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Elsevier
2018
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| Online Access: | https://www.sciencedirect.com/science/article/pii/S0921452617305033 http://hdl.handle.net/11408/3294 |
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| author | Gora, V. E Nyamhere, C. Chawanda, Albert Auret, F.D. Mazunga, Felix Jaure, T. Chibaya, Blessing Omotoso, Ezekiel Danga, Helga Tunhuma, Shandirai Malven |
| author_facet | Gora, V. E Nyamhere, C. Chawanda, Albert Auret, F.D. Mazunga, Felix Jaure, T. Chibaya, Blessing Omotoso, Ezekiel Danga, Helga Tunhuma, Shandirai Malven |
| author_sort | Gora, V. E |
| collection | DSpace |
| description | We have investigated the current-voltage (I-V) characteristics of nickel (Ni), cobalt (Co), tungsten (W) and palladium (Pd) Schottky contacts on n-type 4H-SiC in the 300–800 K temperature range. Results extracted from I-V measurements of Schottky barrier diodes showed that barrier height (ФBo) and ideality factor (n) were strongly dependent on temperature. Schottky barrier heights for contacts of all the metals showed an increase with temperature between 300 K and 800 K. This was attributed to barrier inhomogeneities at the interface between the metal and the semiconductor, which resulted in a distribution of barrier heights at the interface. Ideality factors of Ni, Co and Pd decreased from 1.6 to 1.0 and for W the ideality factor decreased from 1.1 to 1.0 when the temperature was increased from 300 K to 800 K respectively. The device parameters were compared to assess advantages and disadvantages of the metals for envisaged applications. |
| format | Article |
| id | ir-11408-3294 |
| institution | My University |
| language | English |
| publishDate | 2018 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | ir-11408-32942022-06-27T13:49:06Z Comparison of nickel, cobalt, pelladium and tungsten schottky contacts on n-4H-SiC Gora, V. E Nyamhere, C. Chawanda, Albert Auret, F.D. Mazunga, Felix Jaure, T. Chibaya, Blessing Omotoso, Ezekiel Danga, Helga Tunhuma, Shandirai Malven Silicon carbide Metal -semiconductor Schottky contacts Silicide Barrier height We have investigated the current-voltage (I-V) characteristics of nickel (Ni), cobalt (Co), tungsten (W) and palladium (Pd) Schottky contacts on n-type 4H-SiC in the 300–800 K temperature range. Results extracted from I-V measurements of Schottky barrier diodes showed that barrier height (ФBo) and ideality factor (n) were strongly dependent on temperature. Schottky barrier heights for contacts of all the metals showed an increase with temperature between 300 K and 800 K. This was attributed to barrier inhomogeneities at the interface between the metal and the semiconductor, which resulted in a distribution of barrier heights at the interface. Ideality factors of Ni, Co and Pd decreased from 1.6 to 1.0 and for W the ideality factor decreased from 1.1 to 1.0 when the temperature was increased from 300 K to 800 K respectively. The device parameters were compared to assess advantages and disadvantages of the metals for envisaged applications. 2018-11-01T15:18:14Z 2018-11-01T15:18:14Z 2017 Article 0921-4526 https://www.sciencedirect.com/science/article/pii/S0921452617305033 http://hdl.handle.net/11408/3294 en Physica B: Condensed Matter;Vol. 535, 15: p. 333-337 open Elsevier |
| spellingShingle | Silicon carbide Metal -semiconductor Schottky contacts Silicide Barrier height Gora, V. E Nyamhere, C. Chawanda, Albert Auret, F.D. Mazunga, Felix Jaure, T. Chibaya, Blessing Omotoso, Ezekiel Danga, Helga Tunhuma, Shandirai Malven Comparison of nickel, cobalt, pelladium and tungsten schottky contacts on n-4H-SiC |
| title | Comparison of nickel, cobalt, pelladium and tungsten schottky contacts on n-4H-SiC |
| title_full | Comparison of nickel, cobalt, pelladium and tungsten schottky contacts on n-4H-SiC |
| title_fullStr | Comparison of nickel, cobalt, pelladium and tungsten schottky contacts on n-4H-SiC |
| title_full_unstemmed | Comparison of nickel, cobalt, pelladium and tungsten schottky contacts on n-4H-SiC |
| title_short | Comparison of nickel, cobalt, pelladium and tungsten schottky contacts on n-4H-SiC |
| title_sort | comparison of nickel, cobalt, pelladium and tungsten schottky contacts on n-4h-sic |
| topic | Silicon carbide Metal -semiconductor Schottky contacts Silicide Barrier height |
| url | https://www.sciencedirect.com/science/article/pii/S0921452617305033 http://hdl.handle.net/11408/3294 |
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