Similar Items

Comparison of nickel, cobalt, pelladium and tungsten schottky contacts on n-4H-SiC

Comparison of nickel, cobalt, pelladium and tungsten schottky contacts on n-4H-SiC

We have investigated the current-voltage (I-V) characteristics of nickel (Ni), cobalt (Co), tungsten (W) and palladium (Pd) Schottky contacts on n-type 4H-SiC in the 300–800 K temperature range. Results extracted from I-V measurements of Schottky barrier diodes showed that barrier height (ФBo) and i...

Full description

Saved in:
Bibliographic Details
Main Authors: Gora, V. E, Nyamhere, C., Chawanda, Albert, Auret, F.D., Mazunga, Felix, Jaure, T., Chibaya, Blessing, Omotoso, Ezekiel, Danga, Helga, Tunhuma, Shandirai Malven
Format: Article
Language:English
Published: Elsevier 2018
Subjects:
Silicon carbide
Metal -semiconductor
Schottky contacts
Silicide
Barrier height
Online Access:https://www.sciencedirect.com/science/article/pii/S0921452617305033
http://hdl.handle.net/11408/3294
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://www.sciencedirect.com/science/article/pii/S0921452617305033
http://hdl.handle.net/11408/3294