Analysis of Current Voltage measurements on Au/Ni/n-GaN Schottky contacts in a Wide Temperature Range

Current–voltage characteristics of Au/Ni/n-GaN Schottky contacts have been measured in the 60–320 K temperature range. The zero bias barrier height, ϕbo and ideality factor, n have been studied as a function of temperature. The sharp increase in ideality factor at low temperatures has been explained...

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Main Authors: Mtangi, W., Janse. van Rensburg, P. J., Diale, M., Auret, F. D., Nyamhere, Cloud, Nel, J. M., Chawanda, Albert
Format: Article
Published: Elsevier 2016
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Online Access:http://www.sciencedirect.com.access.msu.ac.zw:2048/science/article/pii/S0921510710001996
http://hdl.handle.net/11408/1628
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author Mtangi, W.
Janse. van Rensburg, P. J.
Diale, M.
Auret, F. D.
Nyamhere, Cloud
Nel, J. M.
Chawanda, Albert
author_facet Mtangi, W.
Janse. van Rensburg, P. J.
Diale, M.
Auret, F. D.
Nyamhere, Cloud
Nel, J. M.
Chawanda, Albert
author_sort Mtangi, W.
collection DSpace
description Current–voltage characteristics of Au/Ni/n-GaN Schottky contacts have been measured in the 60–320 K temperature range. The zero bias barrier height, ϕbo and ideality factor, n have been studied as a function of temperature. The sharp increase in ideality factor at low temperatures has been explained as an effect of thermionic field emission. The deviation of the characteristics from the ideal thermionic behaviour is more pronounced with a decrease in temperature, in which the results obtained indicate the presence of other current transport mechanisms in the 60–280 K temperature range and the dominance of pure thermionic emission current at 300 K. The increase in barrier height with increasing temperature has been explained as an effect of barrier inhomogeneities.
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spelling ir-11408-16282022-06-27T13:49:06Z Analysis of Current Voltage measurements on Au/Ni/n-GaN Schottky contacts in a Wide Temperature Range Mtangi, W. Janse. van Rensburg, P. J. Diale, M. Auret, F. D. Nyamhere, Cloud Nel, J. M. Chawanda, Albert GaN Schottky contacts; Schottky barrier height; Thermionic field emission; Temperature dependence Current–voltage characteristics of Au/Ni/n-GaN Schottky contacts have been measured in the 60–320 K temperature range. The zero bias barrier height, ϕbo and ideality factor, n have been studied as a function of temperature. The sharp increase in ideality factor at low temperatures has been explained as an effect of thermionic field emission. The deviation of the characteristics from the ideal thermionic behaviour is more pronounced with a decrease in temperature, in which the results obtained indicate the presence of other current transport mechanisms in the 60–280 K temperature range and the dominance of pure thermionic emission current at 300 K. The increase in barrier height with increasing temperature has been explained as an effect of barrier inhomogeneities. 2016-06-24T09:57:58Z 2016-06-24T09:57:58Z 2010 Article 0921-5107 http://www.sciencedirect.com.access.msu.ac.zw:2048/science/article/pii/S0921510710001996 http://hdl.handle.net/11408/1628 Materials Science and Engineering: B;Vol. 171, No. 1–3; p. 1-4 open Elsevier
spellingShingle GaN Schottky contacts; Schottky barrier height; Thermionic field emission; Temperature dependence
Mtangi, W.
Janse. van Rensburg, P. J.
Diale, M.
Auret, F. D.
Nyamhere, Cloud
Nel, J. M.
Chawanda, Albert
Analysis of Current Voltage measurements on Au/Ni/n-GaN Schottky contacts in a Wide Temperature Range
title Analysis of Current Voltage measurements on Au/Ni/n-GaN Schottky contacts in a Wide Temperature Range
title_full Analysis of Current Voltage measurements on Au/Ni/n-GaN Schottky contacts in a Wide Temperature Range
title_fullStr Analysis of Current Voltage measurements on Au/Ni/n-GaN Schottky contacts in a Wide Temperature Range
title_full_unstemmed Analysis of Current Voltage measurements on Au/Ni/n-GaN Schottky contacts in a Wide Temperature Range
title_short Analysis of Current Voltage measurements on Au/Ni/n-GaN Schottky contacts in a Wide Temperature Range
title_sort analysis of current voltage measurements on au/ni/n-gan schottky contacts in a wide temperature range
topic GaN Schottky contacts; Schottky barrier height; Thermionic field emission; Temperature dependence
url http://www.sciencedirect.com.access.msu.ac.zw:2048/science/article/pii/S0921510710001996
http://hdl.handle.net/11408/1628
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