Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (1 1 1)
We have studied the experimental linear relationship between barrier heights and ideality factors for palladium (Pd) on bulk-grown (1 1 1) Sb-doped n-type germanium (Ge) metal-semiconductor structures with a doping density of about 2.5×1015 cm−3. The Pd Schottky contacts were fabricated by vacuum re...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2016
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| Subjects: | |
| Online Access: | http://www.sciencedirect.com.access.msu.ac.zw:2048/science/article/pii/S1369800111000928 http://hdl.handle.net/11408/1619 |
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