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Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0)

Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0)

Iridium (Ir) Schottky barrier diodes were deposited on bulk grown (1 0 0) Sb-doped n-type germanium by using the electron beam deposition system. Electrical characterization of these contacts using current–voltage (I–V) and capacitance–voltage (C–V) measurements was performed under various annealing...

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Bibliographic Details
Main Authors: Chawanda, Albert, Coelho, S.M.M., Aureta, F.D., Mtangi, W., Nyamhere, C., Nela, J.M., Diale, M.
Format: Article
Language:English
Published: Elsevier 2016
Subjects:
Schottky contact; Germanium; Annealing; Ideality factor; Agglomeration
Online Access:http://www.sciencedirect.com.access.msu.ac.zw:2048/science/article/pii/S0925838811018718
http://hdl.handle.net/11408/1616
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http://www.sciencedirect.com.access.msu.ac.zw:2048/science/article/pii/S0925838811018718
http://hdl.handle.net/11408/1616