The dependence of barrier height on temperature for Pd Schottky contacts on ZnO
Temperature dependent current–voltage (I–V) and capacitance–voltage (C–V) measurements have been performed on Pd/ZnO Schottky barrier diodes in the range 60–300 K. The room temperature values for the zero bias barrier height from the I–Vmeasurements (ΦI–V) was found to be 0.52 eV and from the C–V me...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2016
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| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S0921452609010977 http://hdl.handle.net/11408/1615 |
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