A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices
In this work, the electrical properties of dislocation loops and their role in the generation of leakage currents in p-n or Schottky junctions were investigated both experimentally and through simulations. Deep Level Transient Spectroscopy (DLTS) reveals that the implantation of silicon with 2 × 101...
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| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | research article |
| Published: |
American Institute of Physics
2023
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| Subjects: | |
| Online Access: | https://cris.library.msu.ac.zw//handle/11408/5615 https://doi.org/10.1063/1.4935293 |
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