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A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices

A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices

In this work, the electrical properties of dislocation loops and their role in the generation of leakage currents in p-n or Schottky junctions were investigated both experimentally and through simulations. Deep Level Transient Spectroscopy (DLTS) reveals that the implantation of silicon with 2 × 101...

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Bibliographic Details
Main Authors: C. Nyamhere, A. Scheinemann, A. Schenk, A. Scheit, F. Olivie, F. Cristiano
Other Authors: CNRS , LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France; Univ de Toulouse , LAAS, F-31400 Toulouse, France; Midlands State University , P. Bag 9055, Gweru, Zimbabwe
Format: research article
Published: American Institute of Physics 2023
Subjects:
Dislocation loops
Leakage currents
Si shallow junction devices
Online Access:https://cris.library.msu.ac.zw//handle/11408/5615
https://doi.org/10.1063/1.4935293
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https://cris.library.msu.ac.zw//handle/11408/5615
https://doi.org/10.1063/1.4935293