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Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range

Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range

Barrier height inhomogeneities on Pd/n-type 4H-SiC Schottky barrier diodes in the 300–800 K temperature range have been investigated. Palladium is known to form silicide above 673 K. Temperature dependent current-voltage (I-V) characteristics were analyzed. Barrier height (BH) and ideality factor (n...

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Bibliographic Details
Main Authors: Gora, V.E., Auret, F.D., Danga, H.T., Tunhuma, S.M, Nyamhere, C., Igumbor, E., Chawanda, A
Format: Article
Language:English
Published: Elsevier Ltd 2021
Subjects:
Barrier height
Richardson constant
4H-SiC
Barrier height inhomogeneities
Schottky Barrier height
Online Access:https://www.sciencedirect.com/science/article/abs/pii/S0921510719301655#!
http://hdl.handle.net/11408/4371
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https://www.sciencedirect.com/science/article/abs/pii/S0921510719301655#!
http://hdl.handle.net/11408/4371