Correlation between barrier heights and ideality factors of Ni/n-Ge (100) schottky barrier diodes
We computed the homogeneous Schottky barrier height (SBH) at ideality factor (n) = 1.0 of Ni/nGe (100) Schottky diodes (SDs). The SDs were identically prepared by using resistive evaporation of Ni on n-Ge (100). The SBHs and n of these diodes (24 dots) were calculated from their experimental forward...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Korean Physical Society
2016
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| Subjects: | |
| Online Access: | http://hdl.handle.net/11408/1629 |
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