Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation
Deep level transient spectroscopy (DLTS) and Laplace-DLTS have been used to investigate the defects created in Sb doped Ge after irradiation with 2 MeV protons having a fluence of 1×1013 protons/cm2. The results show that proton irradiation resulted in primary hole traps at EV +0.15 and EV +0.30 eV...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2016
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| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S0921452611004637 http://hdl.handle.net/11408/1618 |
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