Electrical and optical characterization of extended defects induced in p-type Si after Si ion implantation
In this work we present the analysis of small interstitial clusters (ICs) introduced in p-type Si after ion implantation using deep level transient spectroscopy (DLTS) and photoluminescence. Silicon ions with energy 380 keV and fluence of 1.0 x 1012 cm-2 have been implanted into bulk p-type Si and p...
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| Language: | English |
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Wiley
2022
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| Online Access: | https://cris.library.msu.ac.zw//handle/11408/5333 https://doi.org/10.1002/pssc.201300204 |
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| author | Cloud Nyamhere |
| author2 | Midlands State University |
| author_facet | Midlands State University Cloud Nyamhere |
| author_sort | Cloud Nyamhere |
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| description | In this work we present the analysis of small interstitial clusters (ICs) introduced in p-type Si after ion implantation using deep level transient spectroscopy (DLTS) and photoluminescence. Silicon ions with energy 380 keV and fluence of 1.0 x 1012 cm-2 have been implanted into bulk p-type Si and post-implant annealing at temperatures between 500 oC and 800 oC specifically to create small interstitial cluster (ICs) defects. In the samples annealed at 500 oC, DLTS spectra show deep level hole traps at EV + 0.20 eV, EV + 0.25 eV, EV + 0.36 eV, and EV + 0.50 eV. The hole traps EV + 0.36 eV and EV + 0.50 eV have been attributed to the small Si self-interstitial clusters. After increasing the post-implant anneals to 600 oC there is a significant decrease in defect concentration and all the defects are annealed-out at 700 oC. Photoluminescence (PL) spectroscopy of the samples reveals optical band levels, at 1218 nm (1.019 eV), and 1233 nm (1.007 eV) which have both been attributed to interstitial cluster defects. The interstitial cluster-related optical band levels have been observed in the samples annealed at 500 oC which correlate well with DLTS measurements. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| format | research article |
| id | ir-11408-5333 |
| institution | My University |
| language | English |
| publishDate | 2022 |
| publisher | Wiley |
| record_format | dspace |
| spelling | ir-11408-53332022-12-21T12:25:23Z Electrical and optical characterization of extended defects induced in p-type Si after Si ion implantation Cloud Nyamhere Midlands State University In this work we present the analysis of small interstitial clusters (ICs) introduced in p-type Si after ion implantation using deep level transient spectroscopy (DLTS) and photoluminescence. Silicon ions with energy 380 keV and fluence of 1.0 x 1012 cm-2 have been implanted into bulk p-type Si and post-implant annealing at temperatures between 500 oC and 800 oC specifically to create small interstitial cluster (ICs) defects. In the samples annealed at 500 oC, DLTS spectra show deep level hole traps at EV + 0.20 eV, EV + 0.25 eV, EV + 0.36 eV, and EV + 0.50 eV. The hole traps EV + 0.36 eV and EV + 0.50 eV have been attributed to the small Si self-interstitial clusters. After increasing the post-implant anneals to 600 oC there is a significant decrease in defect concentration and all the defects are annealed-out at 700 oC. Photoluminescence (PL) spectroscopy of the samples reveals optical band levels, at 1218 nm (1.019 eV), and 1233 nm (1.007 eV) which have both been attributed to interstitial cluster defects. The interstitial cluster-related optical band levels have been observed in the samples annealed at 500 oC which correlate well with DLTS measurements. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) 11 1 2022-12-21T12:25:23Z 2022-12-21T12:25:23Z 2013-12-09 research article https://cris.library.msu.ac.zw//handle/11408/5333 https://doi.org/10.1002/pssc.201300204 en Physica status solidi (c) – current topics in solid state physics 1610-1642 open https://doi.org/10.1002/pssc.201300204 Wiley |
| spellingShingle | Cloud Nyamhere Electrical and optical characterization of extended defects induced in p-type Si after Si ion implantation |
| title | Electrical and optical characterization of extended defects induced in p-type Si after Si ion implantation |
| title_full | Electrical and optical characterization of extended defects induced in p-type Si after Si ion implantation |
| title_fullStr | Electrical and optical characterization of extended defects induced in p-type Si after Si ion implantation |
| title_full_unstemmed | Electrical and optical characterization of extended defects induced in p-type Si after Si ion implantation |
| title_short | Electrical and optical characterization of extended defects induced in p-type Si after Si ion implantation |
| title_sort | electrical and optical characterization of extended defects induced in p-type si after si ion implantation |
| url | https://cris.library.msu.ac.zw//handle/11408/5333 https://doi.org/10.1002/pssc.201300204 |
| work_keys_str_mv | AT cloudnyamhere electricalandopticalcharacterizationofextendeddefectsinducedinptypesiaftersiionimplantation |