Similar Items
-
Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0)
by: Chawanda, Albert, et al.
Published: (2016) -
Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes
by: Chawanda, Albert, et al.
Published: (2021) -
Electrical characterisation of Ruthenium Schottky contacts on n- Ge (1 0 0)
by: Chawanda, Albert, et al.
Published: (2014) -
Microstructural and surface characterization of thin gold films on n-Ge (111)
by: Nel, J.M., et al.
Published: (2016) -
Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation
by: Nyamhere, C., et al.
Published: (2016)
Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (1 0 0) and defects introduced during contacts fabrication and annealing process
Palladium (Pd) and cobalt (Co) Schottky barrier diodes were fabricated on n-Ge (1 0 0). The Pd-Schottky contacts were deposited by resistive evaporation while the Co-contacts were deposited by resistive evaporation and electron beam deposition. Current–voltage (I–V), capacitance–voltage (C–V) and de...
Saved in:
Main Authors: | Chawanda, Albert, Nyamhere, C., Auret, F. D., Mtangi, W., Hlatshwayo, T. T., Diale, M., Nel, J. M. |
---|---|
Format: | Article |
Language: | English |
Published: |
Elsevier
2021
|
Subjects: | |
Online Access: | https://www.sciencedirect.com/science/article/abs/pii/S0921452609011156 https://doi.org/10.1016/j.physb.2009.09.043 http://hdl.handle.net/11408/4270 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|