Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (1 0 0) and defects introduced during contacts fabrication and annealing process
Palladium (Pd) and cobalt (Co) Schottky barrier diodes were fabricated on n-Ge (1 0 0). The Pd-Schottky contacts were deposited by resistive evaporation while the Co-contacts were deposited by resistive evaporation and electron beam deposition. Current–voltage (I–V), capacitance–voltage (C–V) and de...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2021
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| Subjects: | |
| Online Access: | https://www.sciencedirect.com/science/article/abs/pii/S0921452609011156 https://doi.org/10.1016/j.physb.2009.09.043 http://hdl.handle.net/11408/4270 |
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| Summary: | Palladium (Pd) and cobalt (Co) Schottky barrier diodes were fabricated on n-Ge (1 0 0). The Pd-Schottky contacts were deposited by resistive evaporation while the Co-contacts were deposited by resistive evaporation and electron beam deposition. Current–voltage (I–V), capacitance–voltage (C–V) and deep level transient spectroscopy (DLTS) measurements were performed on as-deposited and annealed samples. Electrical properties of Pd and Co samples annealed between 30 and 600 °C indicate the formation of one phase of palladium germanide and two phases of cobalt germanide. No defects were observed for the resistively evaporated as-deposited Pd-and Co-Schottky contacts. A hole trap at 0.33 eV above the valence band was observed on the Pd-Schottky contacts after annealing at 300 °C. An electron trap at 0.37 eV below the conduction band and a hole trap at 0.29 eV above the valence band was observed on as-deposited Co-electron beam deposited Schottky contacts. Rutherford back scattering (RBS) technique was also used to characterise the Co–Ge, for as-deposited and annealed samples. |
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