Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0)
Iridium (Ir) Schottky barrier diodes were deposited on bulk grown (1 0 0) Sb-doped n-type germanium by using the electron beam deposition system. Electrical characterization of these contacts using current–voltage (I–V) and capacitance–voltage (C–V) measurements was performed under various annealing...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2016
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| Subjects: | |
| Online Access: | http://www.sciencedirect.com.access.msu.ac.zw:2048/science/article/pii/S0925838811018718 http://hdl.handle.net/11408/1616 |
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