Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0)
Iridium (Ir) Schottky barrier diodes were deposited on bulk grown (1 0 0) Sb-doped n-type germanium by using the electron beam deposition system. Electrical characterization of these contacts using current–voltage (I–V) and capacitance–voltage (C–V) measurements was performed under various annealing...
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| Format: | Article |
| Language: | English |
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Elsevier
2016
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| Online Access: | http://www.sciencedirect.com.access.msu.ac.zw:2048/science/article/pii/S0925838811018718 http://hdl.handle.net/11408/1616 |
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| author | Chawanda, Albert Coelho, S.M.M. Aureta, F.D. Mtangi, W. Nyamhere, C. Nela, J.M. Diale, M. |
| author_facet | Chawanda, Albert Coelho, S.M.M. Aureta, F.D. Mtangi, W. Nyamhere, C. Nela, J.M. Diale, M. |
| author_sort | Chawanda, Albert |
| collection | DSpace |
| description | Iridium (Ir) Schottky barrier diodes were deposited on bulk grown (1 0 0) Sb-doped n-type germanium by using the electron beam deposition system. Electrical characterization of these contacts using current–voltage (I–V) and capacitance–voltage (C–V) measurements was performed under various annealing conditions. The variation of the electrical properties of these Schottky diodes can be attributed to combined effects of interfacial reaction and phase transformation during the annealing process. Thermal stability of the Ir/n-Ge (1 0 0) was observed up to annealing temperature of 500 °C. Furthermore, structural characterization of these samples was performed by using a scanning electron microscopy (SEM) at different annealing temperatures. Results have also revealed that the onset temperature for agglomeration in a 20 nm Ir/n-Ge (1 0 0) system occurs between 600 and 700 °C. |
| format | Article |
| id | ir-11408-1616 |
| institution | My University |
| language | English |
| publishDate | 2016 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | ir-11408-16162022-06-27T13:49:06Z Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0) Chawanda, Albert Coelho, S.M.M. Aureta, F.D. Mtangi, W. Nyamhere, C. Nela, J.M. Diale, M. Schottky contact; Germanium; Annealing; Ideality factor; Agglomeration Iridium (Ir) Schottky barrier diodes were deposited on bulk grown (1 0 0) Sb-doped n-type germanium by using the electron beam deposition system. Electrical characterization of these contacts using current–voltage (I–V) and capacitance–voltage (C–V) measurements was performed under various annealing conditions. The variation of the electrical properties of these Schottky diodes can be attributed to combined effects of interfacial reaction and phase transformation during the annealing process. Thermal stability of the Ir/n-Ge (1 0 0) was observed up to annealing temperature of 500 °C. Furthermore, structural characterization of these samples was performed by using a scanning electron microscopy (SEM) at different annealing temperatures. Results have also revealed that the onset temperature for agglomeration in a 20 nm Ir/n-Ge (1 0 0) system occurs between 600 and 700 °C. 2016-06-22T14:06:16Z 2016-06-22T14:06:16Z 2012-02 Article 0925-8388 http://www.sciencedirect.com.access.msu.ac.zw:2048/science/article/pii/S0925838811018718 http://hdl.handle.net/11408/1616 en Journal of Alloys and Compounds;Vol.513; p. 44-49 open Elsevier |
| spellingShingle | Schottky contact; Germanium; Annealing; Ideality factor; Agglomeration Chawanda, Albert Coelho, S.M.M. Aureta, F.D. Mtangi, W. Nyamhere, C. Nela, J.M. Diale, M. Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0) |
| title | Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0) |
| title_full | Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0) |
| title_fullStr | Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0) |
| title_full_unstemmed | Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0) |
| title_short | Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0) |
| title_sort | effect of thermal treatment on the characteristics of iridium schottky barrier diodes on n-ge (1 0 0) |
| topic | Schottky contact; Germanium; Annealing; Ideality factor; Agglomeration |
| url | http://www.sciencedirect.com.access.msu.ac.zw:2048/science/article/pii/S0925838811018718 http://hdl.handle.net/11408/1616 |
| work_keys_str_mv | AT chawandaalbert effectofthermaltreatmentonthecharacteristicsofiridiumschottkybarrierdiodesonnge100 AT coelhosmm effectofthermaltreatmentonthecharacteristicsofiridiumschottkybarrierdiodesonnge100 AT auretafd effectofthermaltreatmentonthecharacteristicsofiridiumschottkybarrierdiodesonnge100 AT mtangiw effectofthermaltreatmentonthecharacteristicsofiridiumschottkybarrierdiodesonnge100 AT nyamherec effectofthermaltreatmentonthecharacteristicsofiridiumschottkybarrierdiodesonnge100 AT nelajm effectofthermaltreatmentonthecharacteristicsofiridiumschottkybarrierdiodesonnge100 AT dialem effectofthermaltreatmentonthecharacteristicsofiridiumschottkybarrierdiodesonnge100 |