Electrical and optical characterization of extended defects induced in p-type Si after Si ion implantation
In this work we present the analysis of small interstitial clusters (ICs) introduced in p-type Si after ion implantation using deep level transient spectroscopy (DLTS) and photoluminescence. Silicon ions with energy 380 keV and fluence of 1.0 x 1012 cm-2 have been implanted into bulk p-type Si and p...
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| Format: | research article |
| Language: | English |
| Published: |
Wiley
2022
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| Online Access: | https://cris.library.msu.ac.zw//handle/11408/5333 https://doi.org/10.1002/pssc.201300204 |
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