Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range
Barrier height inhomogeneities on Pd/n-type 4H-SiC Schottky barrier diodes in the 300–800 K temperature range have been investigated. Palladium is known to form silicide above 673 K. Temperature dependent current-voltage (I-V) characteristics were analyzed. Barrier height (BH) and ideality factor (n...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier Ltd
2021
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| Subjects: | |
| Online Access: | https://www.sciencedirect.com/science/article/abs/pii/S0921510719301655#! http://hdl.handle.net/11408/4371 |
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