Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range
Barrier height inhomogeneities on Pd/n-type 4H-SiC Schottky barrier diodes in the 300–800 K temperature range have been investigated. Palladium is known to form silicide above 673 K. Temperature dependent current-voltage (I-V) characteristics were analyzed. Barrier height (BH) and ideality factor (n...
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| Format: | Article |
| Language: | English |
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Elsevier Ltd
2021
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| Online Access: | https://www.sciencedirect.com/science/article/abs/pii/S0921510719301655#! http://hdl.handle.net/11408/4371 |
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| author | Gora, V.E. Auret, F.D. Danga, H.T. Tunhuma, S.M Nyamhere, C. Igumbor, E. Chawanda, A |
| author_facet | Gora, V.E. Auret, F.D. Danga, H.T. Tunhuma, S.M Nyamhere, C. Igumbor, E. Chawanda, A |
| author_sort | Gora, V.E. |
| collection | DSpace |
| description | Barrier height inhomogeneities on Pd/n-type 4H-SiC Schottky barrier diodes in the 300–800 K temperature range have been investigated. Palladium is known to form silicide above 673 K. Temperature dependent current-voltage (I-V) characteristics were analyzed. Barrier height (BH) and ideality factor (n) were found to be strongly temperature dependent. Barrier height increased, whilst ideality factor decreased with increasing in temperature and the Richardson plot showed some deviation from linearity. This was attributed to barrier inhomogeneities at the metal-semiconductor interface which resulted in a distribution of barrier heights. From the modified Richardson plot, the modified Richardson constant, A** was found to be 155 Acm−2K−2 and 87 Acm-2 K−2 in the 300–525 K and the 550–800 K temperature ranges respectively. |
| format | Article |
| id | ir-11408-4371 |
| institution | My University |
| language | English |
| publishDate | 2021 |
| publisher | Elsevier Ltd |
| record_format | dspace |
| spelling | ir-11408-43712022-06-27T13:49:06Z Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range Gora, V.E. Auret, F.D. Danga, H.T. Tunhuma, S.M Nyamhere, C. Igumbor, E. Chawanda, A Barrier height Richardson constant 4H-SiC Barrier height inhomogeneities Schottky Barrier height Barrier height inhomogeneities on Pd/n-type 4H-SiC Schottky barrier diodes in the 300–800 K temperature range have been investigated. Palladium is known to form silicide above 673 K. Temperature dependent current-voltage (I-V) characteristics were analyzed. Barrier height (BH) and ideality factor (n) were found to be strongly temperature dependent. Barrier height increased, whilst ideality factor decreased with increasing in temperature and the Richardson plot showed some deviation from linearity. This was attributed to barrier inhomogeneities at the metal-semiconductor interface which resulted in a distribution of barrier heights. From the modified Richardson plot, the modified Richardson constant, A** was found to be 155 Acm−2K−2 and 87 Acm-2 K−2 in the 300–525 K and the 550–800 K temperature ranges respectively. 2021-06-04T10:48:01Z 2021-06-04T10:48:01Z 2019 Article 921-5107 https://www.sciencedirect.com/science/article/abs/pii/S0921510719301655#! http://hdl.handle.net/11408/4371 en Materials Science and Engineering;Vol.247 open Elsevier Ltd |
| spellingShingle | Barrier height Richardson constant 4H-SiC Barrier height inhomogeneities Schottky Barrier height Gora, V.E. Auret, F.D. Danga, H.T. Tunhuma, S.M Nyamhere, C. Igumbor, E. Chawanda, A Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range |
| title | Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range |
| title_full | Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range |
| title_fullStr | Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range |
| title_full_unstemmed | Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range |
| title_short | Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range |
| title_sort | barrier height inhomogeneities on pd/n-4h-sic schottky diodes in a wide temperature range |
| topic | Barrier height Richardson constant 4H-SiC Barrier height inhomogeneities Schottky Barrier height |
| url | https://www.sciencedirect.com/science/article/abs/pii/S0921510719301655#! http://hdl.handle.net/11408/4371 |
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