Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes
The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current–voltage (I−V) measurements in the temperature range 140–300 K. The I–V characteristics of the diodes indicate very strong temperature depe...
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Elsevier
2021
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| Online Access: | https://doi.org/10.1016/j.physb.2011.09.089 https://www.sciencedirect.com/science/article/abs/pii/S092145261100980X http://hdl.handle.net/11408/4323 |
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| author | Chawanda, Albert Mtangi, Wilbert Auret, F.D. Nel, Jackie M. Nyamhere, Cloud Diale, M. |
| author_facet | Chawanda, Albert Mtangi, Wilbert Auret, F.D. Nel, Jackie M. Nyamhere, Cloud Diale, M. |
| author_sort | Chawanda, Albert |
| collection | DSpace |
| description | The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current–voltage (I−V) measurements in the temperature range 140–300 K. The I–V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero-bias Schottky barrier height (SBH) (ΦB) increases with the increasing temperature. The I–V characteristics are analyzed using the thermionic emission (TE) model and the assumption of a Gaussian distribution of the barrier heights due to barrier inhomogeneities at the metal–semiconductor interface. The zero-bias barrier height ΦB vs. 1/2 kT plot has been used to show the evidence of a Gaussian distribution of barrier heights and values of ΦB=0.615 eV and standard deviation σs0=0.0858 eV for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. The Richardson constant and the mean barrier height from the modified Richardson plot were obtained as 1.37 A cm−2 K−2 and 0.639 eV, respectively. This Richardson constant is much smaller than the reported of 50 A cm−2 K−2. This may be due to greater inhomogeneities at the interface. |
| format | Article |
| id | ir-11408-4323 |
| institution | My University |
| language | English |
| publishDate | 2021 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | ir-11408-43232022-06-27T13:49:06Z Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes Chawanda, Albert Mtangi, Wilbert Auret, F.D. Nel, Jackie M. Nyamhere, Cloud Diale, M. Schottky contacts Current–voltage–temperature Schottky barrier height Gaussian distribution Inhomogeneities The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current–voltage (I−V) measurements in the temperature range 140–300 K. The I–V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero-bias Schottky barrier height (SBH) (ΦB) increases with the increasing temperature. The I–V characteristics are analyzed using the thermionic emission (TE) model and the assumption of a Gaussian distribution of the barrier heights due to barrier inhomogeneities at the metal–semiconductor interface. The zero-bias barrier height ΦB vs. 1/2 kT plot has been used to show the evidence of a Gaussian distribution of barrier heights and values of ΦB=0.615 eV and standard deviation σs0=0.0858 eV for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. The Richardson constant and the mean barrier height from the modified Richardson plot were obtained as 1.37 A cm−2 K−2 and 0.639 eV, respectively. This Richardson constant is much smaller than the reported of 50 A cm−2 K−2. This may be due to greater inhomogeneities at the interface. 2021-06-02T12:23:25Z 2021-06-02T12:23:25Z 2012 Article 0921-4526 https://doi.org/10.1016/j.physb.2011.09.089 https://www.sciencedirect.com/science/article/abs/pii/S092145261100980X http://hdl.handle.net/11408/4323 en Physica B: Condensed Matter;Vol. 407; No. 10: p.1574-1577 open Elsevier |
| spellingShingle | Schottky contacts Current–voltage–temperature Schottky barrier height Gaussian distribution Inhomogeneities Chawanda, Albert Mtangi, Wilbert Auret, F.D. Nel, Jackie M. Nyamhere, Cloud Diale, M. Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes |
| title | Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes |
| title_full | Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes |
| title_fullStr | Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes |
| title_full_unstemmed | Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes |
| title_short | Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes |
| title_sort | current-voltage temperature characteristics of au/n-ge (1 0 0) schottky diodes |
| topic | Schottky contacts Current–voltage–temperature Schottky barrier height Gaussian distribution Inhomogeneities |
| url | https://doi.org/10.1016/j.physb.2011.09.089 https://www.sciencedirect.com/science/article/abs/pii/S092145261100980X http://hdl.handle.net/11408/4323 |
| work_keys_str_mv | AT chawandaalbert currentvoltagetemperaturecharacteristicsofaunge100schottkydiodes AT mtangiwilbert currentvoltagetemperaturecharacteristicsofaunge100schottkydiodes AT auretfd currentvoltagetemperaturecharacteristicsofaunge100schottkydiodes AT neljackiem currentvoltagetemperaturecharacteristicsofaunge100schottkydiodes AT nyamherecloud currentvoltagetemperaturecharacteristicsofaunge100schottkydiodes AT dialem currentvoltagetemperaturecharacteristicsofaunge100schottkydiodes |