Microstructural and surface characterization of thin gold films on n-Ge (111)
Thin gold films were fabricated by vacuum resistive deposition on the n-Ge (111) wafers. The films were annealed between 300 and 6001C. These resulting thin films were then characterised using scanning electron microscopy (field emission and back-scattering modes), Rutherford back scattering spectro...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2016
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| Subjects: | |
| Online Access: | https://doi.org/10.1016/j.physb.2009.09.035 http://hdl.handle.net/11408/1739 |
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