Microstructural and surface characterization of thin gold films on n-Ge (111)
Thin gold films were fabricated by vacuum resistive deposition on the n-Ge (111) wafers. The films were annealed between 300 and 6001C. These resulting thin films were then characterised using scanning electron microscopy (field emission and back-scattering modes), Rutherford back scattering spectro...
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| Format: | Article |
| Language: | English |
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Elsevier
2016
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| Online Access: | https://doi.org/10.1016/j.physb.2009.09.035 http://hdl.handle.net/11408/1739 |
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| author | Nel, J.M. Chawanda, Albert Auret, F.D. Jordaan, W. Odendaal, R.Q. Hayes, M. Coelho, S. |
| author_facet | Nel, J.M. Chawanda, Albert Auret, F.D. Jordaan, W. Odendaal, R.Q. Hayes, M. Coelho, S. |
| author_sort | Nel, J.M. |
| collection | DSpace |
| description | Thin gold films were fabricated by vacuum resistive deposition on the n-Ge (111) wafers. The films were annealed between 300 and 6001C. These resulting thin films were then characterised using scanning electron microscopy (field emission and back-scattering modes), Rutherford back scattering spectroscopy and time of flight secondary ion mass spectroscopy (TOF-SIMS). For temperatures below the eutectic temperature the distribution of both the gold and the germanium on the surface are uniform. Above the eutectic temperature, the formation of gold rich islands on the surface of the Germanium were observed. These changes in the microstructure were found to correspond to changes in the electrical characteristics of the diodes. |
| format | Article |
| id | ir-11408-1739 |
| institution | My University |
| language | English |
| publishDate | 2016 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | ir-11408-17392022-06-27T13:49:06Z Microstructural and surface characterization of thin gold films on n-Ge (111) Nel, J.M. Chawanda, Albert Auret, F.D. Jordaan, W. Odendaal, R.Q. Hayes, M. Coelho, S. Germanium, schottky Characterization Thin gold films were fabricated by vacuum resistive deposition on the n-Ge (111) wafers. The films were annealed between 300 and 6001C. These resulting thin films were then characterised using scanning electron microscopy (field emission and back-scattering modes), Rutherford back scattering spectroscopy and time of flight secondary ion mass spectroscopy (TOF-SIMS). For temperatures below the eutectic temperature the distribution of both the gold and the germanium on the surface are uniform. Above the eutectic temperature, the formation of gold rich islands on the surface of the Germanium were observed. These changes in the microstructure were found to correspond to changes in the electrical characteristics of the diodes. 2016-08-03T10:29:06Z 2016-08-03T10:29:06Z 2009 Article 0921-4526 https://doi.org/10.1016/j.physb.2009.09.035 http://hdl.handle.net/11408/1739 en Physica B;Vol. 404; p. 4493–4495 open Elsevier |
| spellingShingle | Germanium, schottky Characterization Nel, J.M. Chawanda, Albert Auret, F.D. Jordaan, W. Odendaal, R.Q. Hayes, M. Coelho, S. Microstructural and surface characterization of thin gold films on n-Ge (111) |
| title | Microstructural and surface characterization of thin gold films on n-Ge (111) |
| title_full | Microstructural and surface characterization of thin gold films on n-Ge (111) |
| title_fullStr | Microstructural and surface characterization of thin gold films on n-Ge (111) |
| title_full_unstemmed | Microstructural and surface characterization of thin gold films on n-Ge (111) |
| title_short | Microstructural and surface characterization of thin gold films on n-Ge (111) |
| title_sort | microstructural and surface characterization of thin gold films on n-ge (111) |
| topic | Germanium, schottky Characterization |
| url | https://doi.org/10.1016/j.physb.2009.09.035 http://hdl.handle.net/11408/1739 |
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