Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation
Deep level transient spectroscopy (DLTS) and Laplace-DLTS have been used to investigate the defects created in Sb doped Ge after irradiation with 2 MeV protons having a fluence of 1×1013 protons/cm2. The results show that proton irradiation resulted in primary hole traps at EV +0.15 and EV +0.30 eV...
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Elsevier
2016
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S0921452611004637 http://hdl.handle.net/11408/1618 |
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| author | Nyamhere, C. Das, A.G.M. Auret, F.D. Chawanda, Albert Pineda-Vargas, C.A. Venter, A. |
| author_facet | Nyamhere, C. Das, A.G.M. Auret, F.D. Chawanda, Albert Pineda-Vargas, C.A. Venter, A. |
| author_sort | Nyamhere, C. |
| collection | DSpace |
| description | Deep level transient spectroscopy (DLTS) and Laplace-DLTS have been used to investigate the defects created in Sb doped Ge after irradiation with 2 MeV protons having a fluence of 1×1013 protons/cm2. The results show that proton irradiation resulted in primary hole traps at EV +0.15 and EV +0.30 eV and electron traps at EC −0.38, EC −0.32, EC −0.31, EC −0.22, EC −0.20, EC −0.17, EC −0.15 and EC −0.04 eV. Defects observed in this study are compared with those introduced in similar samples after MeV electron irradiation reported earlier. EC −0.31, EC −0.17 and EC −0.04, and EV +0.15 eV were not observed previously in similar samples after high energy irradiation. Results from this study suggest that although similar defects are introduced by electron and proton irradiation, traps introduced by the latter are dose dependent. |
| format | Article |
| id | ir-11408-1618 |
| institution | My University |
| language | English |
| publishDate | 2016 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | ir-11408-16182022-06-27T13:49:06Z Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation Nyamhere, C. Das, A.G.M. Auret, F.D. Chawanda, Albert Pineda-Vargas, C.A. Venter, A. Ge; Defects; Proton irradiation; Electron irradiation; DLTS; L-DLTS Deep level transient spectroscopy (DLTS) and Laplace-DLTS have been used to investigate the defects created in Sb doped Ge after irradiation with 2 MeV protons having a fluence of 1×1013 protons/cm2. The results show that proton irradiation resulted in primary hole traps at EV +0.15 and EV +0.30 eV and electron traps at EC −0.38, EC −0.32, EC −0.31, EC −0.22, EC −0.20, EC −0.17, EC −0.15 and EC −0.04 eV. Defects observed in this study are compared with those introduced in similar samples after MeV electron irradiation reported earlier. EC −0.31, EC −0.17 and EC −0.04, and EV +0.15 eV were not observed previously in similar samples after high energy irradiation. Results from this study suggest that although similar defects are introduced by electron and proton irradiation, traps introduced by the latter are dose dependent. 2016-06-22T14:38:56Z 2016-06-22T14:38:56Z 2011 Article 0921-4526 http://www.sciencedirect.com/science/article/pii/S0921452611004637 http://hdl.handle.net/11408/1618 en Physica B: Condensed Matter;Vol. 406, No. 15-16, p. 3056-3059 open Elsevier |
| spellingShingle | Ge; Defects; Proton irradiation; Electron irradiation; DLTS; L-DLTS Nyamhere, C. Das, A.G.M. Auret, F.D. Chawanda, Albert Pineda-Vargas, C.A. Venter, A. Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation |
| title | Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation |
| title_full | Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation |
| title_fullStr | Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation |
| title_full_unstemmed | Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation |
| title_short | Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation |
| title_sort | deep level transient spectroscopy (dlts) study of defects introduced in antimony doped ge by 2 mev proton irradiation |
| topic | Ge; Defects; Proton irradiation; Electron irradiation; DLTS; L-DLTS |
| url | http://www.sciencedirect.com/science/article/pii/S0921452611004637 http://hdl.handle.net/11408/1618 |
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