Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO
We report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8±0.3) meV that has been suggested as Zni related and possibly H-complex related and (...
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Elsevier
2016
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| Online Access: | http://hdl.handle.net/11408/1617 |
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| author | Mtangi, W. Nel, J.M. Auret, F.D. Chawanda, Albert Diale, M. Nyamhere, C. |
| author_facet | Mtangi, W. Nel, J.M. Auret, F.D. Chawanda, Albert Diale, M. Nyamhere, C. |
| author_sort | Mtangi, W. |
| collection | DSpace |
| description | We report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8±0.3) meV that has been suggested as Zni related and possibly H-complex related and (54.5±0.9) meV, which has been assigned to an Al-related donor. Annealing studies performed on the hydrogen peroxide treated samples reveal the existence of a conductive channel in the samples in which new energy levels have been observed, Zn vacancies, related to the Group I elements, XZn. The surface donor volume concentration of the conductive channel was calculated from a theory developed by Look (2007) [1]. Results indicate an increase in the surface volume concentration with increasing annealing temperature from 60×1017 cm−3 at 200 °C to 4.37×1018 cm-3 at 800 °C. |
| format | Article |
| id | ir-11408-1617 |
| institution | My University |
| language | English |
| publishDate | 2016 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | ir-11408-16172022-06-27T13:49:06Z Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO Mtangi, W. Nel, J.M. Auret, F.D. Chawanda, Albert Diale, M. Nyamhere, C. Hall effect; Surface conduction; Zinc interstitials; Annealing; Shallow donors We report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8±0.3) meV that has been suggested as Zni related and possibly H-complex related and (54.5±0.9) meV, which has been assigned to an Al-related donor. Annealing studies performed on the hydrogen peroxide treated samples reveal the existence of a conductive channel in the samples in which new energy levels have been observed, Zn vacancies, related to the Group I elements, XZn. The surface donor volume concentration of the conductive channel was calculated from a theory developed by Look (2007) [1]. Results indicate an increase in the surface volume concentration with increasing annealing temperature from 60×1017 cm−3 at 200 °C to 4.37×1018 cm-3 at 800 °C. 2016-06-22T14:18:03Z 2016-06-22T14:18:03Z 2012 Article 0921-4526 hhttp://www.sciencedirect.com/science/article/pii/S0921452611009926 http://hdl.handle.net/11408/1617 en Physica B: Condensed Matter;Vol. 407, No. 10; p. 1624–1627 open Elsevier |
| spellingShingle | Hall effect; Surface conduction; Zinc interstitials; Annealing; Shallow donors Mtangi, W. Nel, J.M. Auret, F.D. Chawanda, Albert Diale, M. Nyamhere, C. Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO |
| title | Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO |
| title_full | Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO |
| title_fullStr | Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO |
| title_full_unstemmed | Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO |
| title_short | Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO |
| title_sort | annealing and surface conduction on hydrogen peroxide treated bulk melt-grown, single crystal zno |
| topic | Hall effect; Surface conduction; Zinc interstitials; Annealing; Shallow donors |
| url | http://hdl.handle.net/11408/1617 |
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